Bauelemente, aktiv > Transistoren > Unipolartransistoren (FETs) > MOSFETs

IRFB7545PBF - MOSFET N-Ch 60V 95A 125W 0,0059R TO220AB

IRFB7545PBF - MOSFET N-Ch 60V 95A 125W 0,0059R TO220AB

HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant

 Zum Angebot
BSP 75N INF - MOSFET, N-CH, SOT-223, 60 V, 0,7 A, 1,8 W

BSP 75N INF - MOSFET, N-CH, SOT-223, 60 V, 0,7 A, 1,8 W

Low Side Switches Logic Level Input Surge temperature protection Overload protection Short-circuit protection

 Zum Angebot
VNP35N07-E - MOSFET, N-CH, TO-220, 70 V, 35 A, 125 W

VNP35N07-E - MOSFET, N-CH, TO-220, 70 V, 35 A, 125 W

Vollständig geschützte Low Voltage Power MOSFETs in VIPower Technologie Integrierte Schutzfunktionen gegen Überspannung, Übertemperatur und Kurzschluss Integrierte Status-Ausgabe, Strombegrenzung und ESD-Schutz

 Zum Angebot
VNP20N07 - MOSFET N-Ch 70V 20A 83W 0,05R TO220

VNP20N07 - MOSFET N-Ch 70V 20A 83W 0,05R TO220

´´OMNIFET´´: FULLY AUTOPROTECTED POWER MOSFET Features LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE

 Zum Angebot
VNP10N07-E - MOSFET, N-CH, TO-220, 70 V, 10 A, 50 W

VNP10N07-E - MOSFET, N-CH, TO-220, 70 V, 10 A, 50 W

Vollständig geschützte Low Voltage Power MOSFETs in VIPower Technologie Integrierte Schutzfunktionen gegen Überspannung, Übertemperatur und Kurzschluss Integrierte Status-Ausgabe, Strombegrenzung und ESD-Schutz

 Zum Angebot
VNB20N07 - MOSFET N-Ch 70V 20A 0,05R D²Pak

VNB20N07 - MOSFET N-Ch 70V 20A 0,05R D²Pak

´´OMNIFET´´: FULLY AUTOPROTECTED POWER MOSFET Features: LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power

 Zum Angebot
VNB10N07 - MOSFET N-Ch 70V 10A 0,1R D²Pak

VNB10N07 - MOSFET N-Ch 70V 10A 0,1R D²Pak

´´OMNIFET´´: FULLY AUTOPROTECTED POWER MOSFET Features LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of

 Zum Angebot
VNP10N06 - MOSFET N-Ch 60V 10A 42W 0,3R TO220

VNP10N06 - MOSFET N-Ch 60V 10A 42W 0,3R TO220

´´OMNIFET´´ FULLY AUTOPROTECTED POWER MOSFET Features LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY STANDARD TO-220 PACKAGE

 Zum Angebot
VNB35NV04 - MOSFET N-Ch 45V 45A 0,013R D²Pak

VNB35NV04 - MOSFET N-Ch 45V 45A 0,013R D²Pak

OMNIFET II: fully autoprotected Power MOSFET Features Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET

 Zum Angebot
STW28NM50N - MOSFET N-Ch 500V 21A 150W 0,158R TO247

STW28NM50N - MOSFET N-Ch 500V 21A 150W 0,158R TO247

N-channel 500 V, 0.135 O, 21 A MDmesh™ II Power MOSFET Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications

 Zum Angebot
STW26NM60N - MOSFET N-Ch 600V 20A 140W 0,165R TO247

STW26NM60N - MOSFET N-Ch 600V 20A 140W 0,165R TO247

N-channel 600 V, 0.135 O typ., 20 A MDmesh™ II Power MOSFET Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications

 Zum Angebot
STW9N150 - MOSFET N-Ch 1500V 8A 320W 2,5R TO247

STW9N150 - MOSFET N-Ch 1500V 8A 320W 2,5R TO247

N-channel 1500 V - 1.8 O - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET Features 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance Application Switching applications

 Zum Angebot
STW20N95K5 - MOSFET N-Ch+Z-Dio 950V 17,5A 250W 0,33R TO247

STW20N95K5 - MOSFET N-Ch+Z-Dio 950V 17,5A 250W 0,33R TO247

N-channel 950 V, 0.275 O typ., 17.5 A MDmesh™ K5 Power MOSFETs Features Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications

 Zum Angebot
STW75NF30 - MOSFET N-Ch 300V 60A 320W 0,045R TO247

STW75NF30 - MOSFET N-Ch 300V 60A 320W 0,045R TO247

N-channel 300 V, 35 mO typ., 60 A STripFET™ II Power MOSFET Features Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications Switching applications

 Zum Angebot
STW15N80K5 - MOSFET N-Ch+Z-Dio 800V 14A 190W 0,375R TO247

STW15N80K5 - MOSFET N-Ch+Z-Dio 800V 14A 190W 0,375R TO247

N-channel 800 V, 0.3 O typ., 14 A MDmesh™ K5 Power MOSFETs Features • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications

 Zum Angebot
STW70N60M2 - MOSFET N-Ch+Z-Dio 600V 68A 450W 0,04R TO247

STW70N60M2 - MOSFET N-Ch+Z-Dio 600V 68A 450W 0,04R TO247

N-channel 600 V, 0.03 O typ., 68 A MDmesh™ M2 Power MOSFET in a TO-247 package Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications

 Zum Angebot